It uses a cellular emitter structure with planar edge termination to enhance switching speeds. Nte electronics nte126 pnp germanium mesa transistor for. What sort of transistors are suitable for fast switching and pwm. Description the bu810 is a multiepitaxial planar npn transistor in to220 package. Fjp09 highvoltage fastswitching npn power transistor.
Fjp09 highvoltage fastswitching npn power transistor keywords. Pnp switching transistor in a sot23 plastic package. Transistor low power converters description the but11a is a silicon multiepitaxial mesa npn transistor in jedec to220 plastic package, particularly intended for switching application. Pinning marking pin description 1 base 2 emitter 3 collector type number marking code. A wide variety of fast switching transistor options are available to you, there are 1,458 suppliers who sells fast switching transistor on, mainly located in asia.
Fast switching devices exhibiting short turnoff and low saturation voltage characteristics. Using the datasheet these parameters are usually listed, you can figure out how fast a transistor can switch between the two states. High voltage fast switching npn power transistor features npn transistor high voltage capability high current capability fast switching speed applications switching mode power supplies flyback and forward single transistor low power convertes description the device is a multiepitaxial mesa npn transistor mounted in to247 plastic package. Pnp switching transistor pn2907a package outline unit a outline references version european projection issue date iec jedec jeita mm 5. Pzt2222a npn switching transistor handbook, halfpage m3d087.
Low voltage fastswitching npn power transistor author. Internal schematic diagram june 1997 1 2 3 to220 absolute maximum ratings symbol parameter value unit. Fast switching devices exhibiting short turnoff and low saturation voltage characteristics npn silicon high speed saturated switching, transistors with low power and high speed switching applications to18 metal can package dimensions minimum maximum a 5. The top countries of suppliers are turkey, china, from which the percentage of fast switching transistor supply is 1%, 99% respectively. For some test i need to create a pulse generator with variable duty cycle and an output voltage of 24 v. Nte electronics nte126 pnp germanium mesa transistor for highspeed switching applications, to18 case, 0. Mje18008 switchmode npn bipolar power transistor for. Fjp09 highvoltage fastswitching npn power transistor author. The worlds fastest transistor has been developed by a pair of us researchers, possibly paving the way for a new generation of supercharged electronic chips. High voltage fastswitching npn power transistor features high voltage capability very high switching speed applications compact fluorescent lamps cfls smps for battery charger description the device is manufactured using high voltage multi epitaxial planar tec hnology for high switching speeds and high voltage capability. Fastswitching npn power transistor description the utc mje09d is a high voltage fastswitching npn power transistor. Fast switching speed surface mounting device in medium power sot223 package applications emergency lighting led ccfl drivers back lighting voltage regulation relay driver description the device is a pnp transistor manufactured using new pbhcd power bipolar high current density technology. Unit ices collector cutoff current vbe 0 vce 1500 v vce 1500 v tj 125 oc 0.
The hobbyist favorite transistor 2n3904 has an ft of 300 mhz, so a really really good circuit designer could make 16 nanosecond inverters out of 2n3904s. Fjp09 high voltage fasts witching npn power transistor typical performance characteristics continued figure 7. Say i have a 5v arduino or other microcontroller and a 12v led strip or other device that requires fast switching andor pwm. Bipolar power transistor selection guide january 2003. Both device a and device b are designed to have the same current capacity of 2. High speed switching transistors farnell element14. Worlds fastest transistor operates at blinding speed. This nchannel enhancement mode silicon gate power field effect transistor is an advanced power. Irf740 datasheet pdf irf 10a, v, ohm, nchannel power.
When using the mosfet as a switch we can drive the mosfet to turn on faster or slower, or pass high or low currents. The diode is a laser, transistor is run off the mill npn. November 2010 doc id 9488 rev 4 114 14 bul742c bulb742c high voltage fastswitching npn power transistor features low spread of dynamic parameters high voltage capability minimum lottolot spread for reliable operation very high switching speed applications electronic ballast for fluorescent lighting switch mode power supplies description. July 2009 doc id 7232 rev 6 110 10 stbv42 high voltage fastswitching npn power transistor features high voltage capability low spread of dynamic parameters very high switching speed applications compact fluorescent lamps cfls smps for battery charger description the device is manufactured using high voltage. The classic 74ls, 74als and other integrated circuits use transistor switching circuits internally, but they have only common driving capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. Description pnp switching transistor in a sot23 plastic package. Highvoltage fastswitching npn power transistor farnell. High voltage fastswitching npn power transistor features phigh voltage capability fast switching speed pbfree plating rohs compliant halogenfree mold compound application electronic ballast switch mode power supply key performance parameters arameter value unit bv ceo 450 v bv cbo 1050 v i c 2. Thermal data rthjcase thermal resistance junctioncase max 0.
It is intended for use in high frequency and efficency converters, switching regulators and motor control. But92 datasheet fastswitching npn power transistor. This is 5v switching regulator circuit using transistor, decreases the size voltage or step down voltage converter circuit. Transistor switching circuit working in saturation state is commonplace in modern circuit design applications. The rca transistors and semiconductor diodes brochure from 1957 contains an introduction on semiconductor physics along with detailed specifications on germanium pnp transistors and a few semiconductor diodes 1n34a, 1n38a, 1n54a, and 1n58a, dimensional outlines, an interchangeability directory, and example. The device is designed for use in lighting applications and low cost switchmode power supplies.
St05 high voltage fastswitching npn power transistor features. Bu208a bu508abu508afi high voltage fastswitching npn power transistors s. St05a datasheet, st05a pdf, st05a data sheet, st05a manual, st05a pdf, st05a, datenblatt, electronics st05a, alldatasheet, free, datasheet, datasheets, data sheet, datas sheets, databook, free datasheet. Internal schematic diagram november 2001 absolute maximum ratings. Pinning marking pin description 1 base 2 emitter 3 collector type number marking code bsr12 b5p fig. Fjp09, highvoltage fastswitching npn power transistor created date.
Bu508a transistors datasheet pdf power transistors. High voltage fastswitching npn power transistor description the utc mje02 designed for use in highvolatge, high speed,power switching in inductive circuit, it is particularly suited for 115 and 220v switchmode applications such as switching regulators,inverters, dc. The bul series is designed for use in lighting applications and low. Minimum pulse width is 20 ns and i need to convert a 3. Applications highspeed switching, especially in portable equipment. Switching a 20 ns pulse with 2n3904 bjt transistor all. Since ft is a transistor parameter listed on datasheets, this answers your question. I feed a 100khz square wave ttl to the base of this transistor and it turns on very very fast a few nsec but it doesnt turn off as fast, it almost takes 2usec for it to turn off. Make voltage output there is the size voltage a little more input at from circuit picture will decrease volt 618v from be left 5v. The slightly more expensive ss9019 fairchild datasheet is considerably faster. What sort of transistors are suitable for fast switching. The fjp09 is a 700 v, 12 a npn silicon epitaxial pla nar transistor.
I also tried with another npn from onsemi which is. The utc mje09d is intended to be used in a energysaving lights electronic ballast, high frequency switching. High voltage fastswitching npn power transistor features high voltage capability fast switching speed pbfree plating rohs compliant halogenfree mold compound application electronic ballast switch mode power supply key performance parameters paramet er value unit bv ceo 450 v bv cbo 1050 v ic 5 a. Applications highspeed, saturated switching applications for industrial service in thick and thinfilm circuits. Parameter symbol test condition 2n2369 2n2369a unit small signal characteristic transition frequency ft vce 10 v, ic 10 ma, f 100 mhz 500 mhz output capacitance cobo vcb 5 v, ie 0, f 140 khz pnp switching transistor bsr12 features low current max. High voltage fastswitching npn power transistor stmicroelectronics. These devices are high voltage, high speed transistors for horizontal.
942 1600 1576 702 265 1093 736 197 1347 408 1297 299 537 932 1142 1313 1390 299 511 754 1418 748 1007 419 987 421 1475 1336 711 448 186 945 1395 856